发明名称 Corner layout for high voltage semiconductor devices
摘要 A corner layout for a semiconductor device that maximizes the breakdown voltage is disclosed. The device includes first and second subsets of the striped cell arrays. The ends of each striped cell in the first array is spaced a uniform distance from the nearest termination device structure. In the second subset, the ends of striped cells proximate a corner of the active cell region are configured to maximize breakdown voltage by spacing the ends of each striped cell a non-uniform distance from the nearest termination device structure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
申请公布号 US9224852(B2) 申请公布日期 2015.12.29
申请号 US201213561500 申请日期 2012.07.30
申请人 Alpha and Omega Semiconductor Incorporated 发明人 Guan Lingpeng;Bhalla Anup
分类号 H01L29/78;H01L29/66;H01L29/40;H01L29/06;H01L29/08;H01L29/10 主分类号 H01L29/78
代理机构 JDI Patent 代理人 Isenberg Joshua D.;JDI Patent
主权项 1. A semiconductor device comprising: a doped layer; an active cell region formed in the doped layer, the active cell region having a plurality of active cell device structures arranged in striped cell arrays, wherein each striped cell array having a first end and a second end; and a termination region having a plurality of termination device structures formed in the doped layer surrounding the active cell region, wherein a first subset of the striped cell arrays are configured to maximize a breakdown voltage of the semiconductor device by having the first and second ends of each striped cell array in the first subset spaced a uniform distance from a nearest termination device structure; andwherein a second subset of the striped cell arrays proximate to a corner region of the active cell region are configured to maximize the breakdown voltage by spacing the first and second ends of each striped cell array in the second subset a non-uniform distance from the nearest termination device structure, wherein the second subset of the striped cell arrays include arcuate end portions in the shape of quarter circles.
地址 Sunnyvale CA US