发明名称 |
Semiconductor device |
摘要 |
The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film. |
申请公布号 |
US9224825(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201314030765 |
申请日期 |
2013.09.18 |
申请人 |
ROHM CO., LTD. |
发明人 |
Nakano Yuki;Nakamura Ryota;Nagao Katsuhisa |
分类号 |
H01L29/10;H01L29/423;H01L21/04;H01L29/66;H01L29/786;H01L29/49;H01L29/78;H01L29/04;H01L29/16 |
主分类号 |
H01L29/10 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A semiconductor device comprising:
a SiC substrate; an epitaxial layer formed on a side of one surface of the SiC substrate; a gate trench dug downwardly from a principal plane of the epitaxial layer, the gate trench having a side surface having an inclination of 0° to 1° with respect to a virtual surface perpendicular to the principal plane of the epitaxial layer, a body region formed beside the gate trench, and a gate electrode facing the body region via a gate insulating film formed on the side surface of the gate trench, along the inclination, the gate electrode having a two-layer structure including a first layer and a second layer, wherein an off-angle of the SiC substrate is less than 4° exceeding 0°, and a thickness of a bottom portion of the gate insulating film is greater than a thickness of a side portion of the gate insulating film. |
地址 |
Kyoto JP |