发明名称 Semiconductor device
摘要 A semiconductor device includes a substrate having a plurality of electrodes and a plurality of leads that are connected to the electrodes and a semiconductor element that is mounted on the substrate. The semiconductor element has a rectangular shape including a long side, a short side, and a corner portion, and has bumps connected to the electrodes. An underfill is filled between the substrate and the semiconductor element and extends on the substrate around the semiconductor element. An overcoat covers the leads on the substrate. At least one of the plurality of leads that is connected to the electrode corresponding to the bump arranged nearest to the corner portion along the long side of the semiconductor element has at least two successive bent portions that are bent in the same direction and is laid out toward the short side of the semiconductor element in a plan view.
申请公布号 US9224705(B2) 申请公布日期 2015.12.29
申请号 US201414196316 申请日期 2014.03.04
申请人 SEIKO EPSON CORPORATION 发明人 Tajimi Shigehisa
分类号 H01L23/48;H01L23/00;H01L21/56;H01L23/498 主分类号 H01L23/48
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A semiconductor device comprising: a substrate including a plurality of electrodes and a plurality of leads that are connected to the electrodes; a semiconductor element that is mounted on the substrate, the semiconductor element having a rectangular shape including a long side, a short side, and a corner portion, and having bumps connected to the electrodes; an underfill that is filled between the substrate and the semiconductor element and extends on the substrate around the semiconductor element; an overcoat that covers the leads on the substrate; and a hollow region formed on the substrate around the corner portion; wherein at least one of the plurality of leads that is connected to the electrode corresponding to the bump arranged nearest to the corner portion along the long side of the semiconductor element has at least two successive bent portions that are bent in the same direction and is laid out toward the short side of the semiconductor element in a plan view, and the at least one of the plurality of leads is laid to avoid the hollow region.
地址 Tokyo JP