Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method

摘要

A method of manufacturing a semiconductor device includes forming trench isolation structures, exposing some of the trench isolation structures 28 to leave others 30 masked, and then selectively etching a buried layer to form a cavity 32 under an active device region 34. The active device region 34 is supported by support regions in the exposed trenches 28. The buried layer may be a SiGe layer on a Si substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a substrate of a first semiconductor material; depositing a buried layer of a second semiconductor material on the substrate; depositing a device layer of a third semiconductor material on the second semiconductor material, wherein at least one active region is at least partially formed in the device layer and over the buried layer; etching trenches extending at least partially through the device layer; forming a plurality of trench isolation regions spaced laterally across the device layer and configured and arranged on sides of at least one isolated active region, the trench isolation regions including at least one trench at least partially filled with support insulator and including at least one other trench that is lined with support insulator that defines an etched pathway which leads to and exposes at least part of the buried layer; and selectively etching the buried layer through said at least one other trench and the etched pathway and therein removing the buried layer from under at least one active region of the device layer, thereby leaving the support insulator for acting as a support structure to support the active region.