Semiconductor device and method for manufacturing same

摘要

This semiconductor device (101) includes: a substrate (1); a thin-film transistor (10) which includes an oxide semiconductor layer (6) as its active layer; a protective layer (11) covering the thin-film transistor; a metal layer (9d, 9t) interposed between the protective layer (11) and the substrate (1); a transparent conductive layer (13, 13t) formed on the protective layer (11); and a connecting portion (20, 30) to electrically connect the metal layer (9d, 9t) and the transparent conductive layer (13, 13t) together. The connecting portion (20, 30) includes an oxide connecting layer (6a, 6t) which is formed out of a same oxide film as a oxide semiconductor layer (6) and which has a lower electrical resistance than the oxide semiconductor layer (6). The metal layer (9d, 9t) is electrically connected to the transparent conductive layer (13, 13t) via the oxide connecting layer (6a, 6t).

主权项

1. A semiconductor device comprising:
a substrate; a thin-film transistor which is supported on the substrate and which includes an oxide semiconductor layer as its active layer; a protective layer covering the thin-film transistor; a metal layer interposed between the protective layer and the substrate; a transparent conductive layer formed on the protective layer; and a connecting portion to electrically connect the metal layer and the transparent conductive layer together, wherein the connecting portion includes an oxide connecting layer which is formed out of a same oxide film as the oxide semiconductor layer and which has a lower electrical resistance than the oxide semiconductor layer, and the metal layer is electrically connected to the transparent conductive layer via the oxide connecting layer.