Shielded gate trench FET with multiple channels

摘要

In one embodiment, an apparatus can include a trench extending into a semiconductor region of a first conductivity type, an electrode disposed in the trench, and a source region of the first conductivity type abutting a sidewall of the trench. The apparatus can include a first well region of a second conductivity type disposed in the semiconductor region below the source region and abutting the sidewall of the trench lateral to the electrode where the second conductivity type is opposite the first conductivity type. The apparatus can also include a second well region of the second conductivity type disposed in the semiconductor region and abutting the sidewall of the trench, and a third well region of the first conductivity type disposed between the first well region and the second well region.

主权项

1. A semiconductor device, comprising:
a pair of trenches extending into a semiconductor region of a first conductivity type; a shield electrode disposed in a trench from the pair of trenches; a gate electrode disposed in the trench from the pair of trenches and above the shield electrode, the gate electrode being insulated from the shield electrode; a source region of the first conductivity type associated with the trench from the pair of trenches; a first well region of a second conductivity type disposed in the semiconductor region between the pair of trenches, a portion of the first well region being disposed below the source region, the first well region directly contacting a sidewall of the trench from the pair of trenches, the second conductivity type being opposite the first conductivity type; a second well region of the second conductivity type disposed in the semiconductor region between the pair of trenches, the second well region directly contacting the sidewall of the trench from the pair of trenches; and a third well region of the first conductivity type disposed between the pair of trenches and between the first well region and the second well region, the third well region directly contacting the sidewall of the trench from the pair of trenches, the third well region being disposed below and in direct contact with the first well region, the third well region being disposed above and in direct contact with the second well region.