Method for correcting electronic proximity effects using the deconvolution of the pattern to be exposed by means of a probabilistic method

摘要

A method of lithography by radiation having critical dimensions of the order of some ten nanometers makes it possible to carry out the correction of the proximity effects by joint optimization of the dose modulation and geometric corrections. Accordingly, a deconvolution of the pattern to be etched is carried out by an iterative procedure modeling the interactions of the radiation with the resined support by a joint probability distribution. Advantageously, when the support exposure tool is of formed-beam type, the pattern to be etched is split into contrasted levels and then the deconvolved image is vectorized and fractured before carrying out the exposure step. In an advantageous embodiment, the method is applied to at least two character cells which are exposed in a multi-pass cells projection method.

主权项

1. A method of lithography by radiation of at least one pattern to be irradiated on a resined support comprising:
generating, using a computer processor, a chosen point spread function for said radiation, and applying, using the computer processor, a chosen deconvolution procedure to said pattern to be irradiated by said point spread function, wherein said point spread function is chosen so as to model only the effects of forward scattering of said radiation and said deconvolution procedure is chosen from among the procedures modeling the interactions of said radiation with the resined support by a joint probability distribution of said interactions, wherein the joint probability distribution of said interactions is associated with a maximum likelihood of each source point of said radiation for all the image points of the pattern to be irradiated as part of the interactions.