METHOD FOR PRODUCING SEMICONDUCTOR

摘要

Disclosed is a method for manufacturing a semiconductor. The method for manufacturing a semiconductor according to an embodiment of the present invention includes the steps of: forming a buffer layer of a predetermined size on a substrate; forming a nitride layer on the buffer layer; forming a rectangular nanopattern by dry-etching a region of the nitride layer; and performing a wet etching process on a semiconductor device having the rectangular nanopattern by using an alkali solution.