发明名称 METHOD FOR MANUFACTURING OF INTEGRATED MICROMECHANICAL RELAY
摘要 FIELD: electricity.SUBSTANCE: method for manufacturing of integrated micromechanical relay with movable electrode made as structure with piezoelectric layer (7) is implemented at surface of silicone wafers in single technological cycle of manufacturing technology for integrated circuits. To this end at surface of silicone substrate (1) dielectric layer (2) is formed of SiOfilm by thermal oxidation; current conductive layer TiN (3) is sputtered and a fixed electrode is formed by ion-beam deposition and etching using projection laser photolithography. Layer Si3N4 is deposited by CVD method with its pre-treatment as a sacrificial layer with further plasma etching. The first current conductive layer TiN (4) is sputtered, dielectric layer SiC (5) with high resilient properties is deposited by magnetronic deposition. The second current conductive layer TiN (6) is sputtered. LZT piezoelectric layer (7) is deposited. The third current conductive layer TiN (8) is sputtered. Then plasma-chemical etching is performed for the following layers: the third current conductive layer TiN (8), LZT piezoelectric layer (7), the second current conductive layer TiN (6), dielectric layer SiC (5) with high resilient properties, the first current conductive layer TiN (4) with formation of a movable multilayer electrode and penetration of sacrificial layer SiN. Etching of sacrificial layer SiNis made with an air gap formed between the fixed and movable electrodes.EFFECT: improved reliability and timing stability of integrated micromechanical relay.1 dwg
申请公布号 RU2572051(C1) 申请公布日期 2015.12.27
申请号 RU20140154615 申请日期 2014.12.31
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT FIZICHESKIKH IZMERENIJ" 发明人 GURIN SERGEJ ALEKSANDROVICH;VERGAZOV IL'JAS RASHITOVICH;VOLKOV VADIM SERGEEVICH
分类号 H01L41/22;B81C1/00;H01L27/20 主分类号 H01L41/22
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