| 摘要 |
<p>Method for manufacturing at least one semiconductor structure (130) on the surface (105) of a substrate (100) wherein the surface comprises silicon. The method comprises steps consisting of providing the substrate (100), forming in contact with an area (101) of the surface (105), referred to as the formation area, a layer (120) of a first material, the remainder (102) of the surface (105), referred to as the free area, remaining free from the first material, the dimensions of the formation area (101) and the first material being suitable for forming the structure (130), the first material comprising gallium, the formation of said layer (120) taking place at a temperature less than 600° C., and forming the structure (130) in contact with the layer (120).</p> |
