发明名称 |
CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition that can give a pattern having extremely high resolution and a small degree of LER.SOLUTION: The chemically amplified resist composition comprises: a sulfonium salt represented by formula (1); and a polymeric compound having a repeating unit represented by formula (U-1), which is decomposed by an action of an acid to increase solubility in an alkali developer. |
申请公布号 |
JP2015232598(A) |
申请公布日期 |
2015.12.24 |
申请号 |
JP20140118577 |
申请日期 |
2014.06.09 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
FUKUSHIMA MASAHIRO;DOMON DAISUKE;MASUNAGA KEIICHI;WATANABE SATOSHI |
分类号 |
G03F7/004;C08F212/14;C08F220/30;G03F7/039 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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