GATE CONFIGURATION WITH STRESS IMPACT AMPLIFICATION

摘要

A gate configuration with stress impact amplification comprises an element activation zone, at least two source/drain electrodes, a first x direction poly configuration, at least two second x direction dummy poly configurations, at least two y direction dummy poly configurations and two gate electrodes. The at least two source/drain electrodes are located on the element activation zone and are paired as top-down sequence. The first x direction poly configuration is located on the element activation zone, divides the element activation zone into two equal zones and separates the at least two source/drain electrodes. The present invention disperses the stress of the contact-etch-stop-layer (CESL) to the y direction dummy poly configurations.

主权项

1. A gate configuration with stress impact amplification comprising:
an element activation zone; at least two source/drain electrodes located on the element activation zone and paired in a top-down sequence; a first x direction poly configuration located on the element activation zone, dividing the element activation zone into two equal zones and separating the at least two source/drain electrodes; at least two second x direction dummy poly configurations symmetrically located on the two equal zones of the element activation zone and surrounding the source/drain electrodes; at least two y direction dummy poly configurations in a pair and non-contactingly located on the top and the lower edges of the element activation zone, and parallel with the top and the lower edges of the element activation zone; and two gate electrodes located on one of the at least two y direction poly configurations.