| 发明名称 |
TERMINAL STRUCTURE, SEMICONDUCTOR DEVICE, AND TERMINAL FORMING METHOD |
| 摘要 |
A terminal structure includes: a pillar containing a first metal material; and a cover layer covering an upper surface and a side surface of the pillar, the cover layer containing a second metal material into which a solder material diffuses more slowly than into the first metal material.;And the terminal structure further includes a bonding layer over the cover layer, the bonding layer containing a metal material capable of solder bonding. |
| 申请公布号 |
US2015371962(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201514734267 |
申请日期 |
2015.06.09 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
AKAMATSU TOSHIYA |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A terminal structure comprising:
a pillar containing a first metal material; and a cover layer covering an upper surface and a side surface of the pillar, the cover layer containing a second metal material into which a solder material diffuses more slowly than into the first metal material. |
| 地址 |
Kawasaki-shi JP |
