| 发明名称 |
Combination Interconnect Structure and Methods of Forming Same |
| 摘要 |
An embodiment semiconductor device includes a substrate and a dielectric layer over the substrate. The dielectric layer includes a first conductive line and a second conductive line. The second conductive line comprises a different conductive material than the first conductive line. |
| 申请公布号 |
US2015371939(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414310618 |
申请日期 |
2014.06.20 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yang Tai-I;Wang Yung-Chih;Chuang Cheng-Chi;Wu Chia-Tien;Lin Tien-Lu |
| 分类号 |
H01L23/528;H01L21/768;H01L23/532 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a dielectric layer over a substrate; a first conductive line in the dielectric layer; and a second conductive line in the dielectric layer, wherein the second conductive line comprises a different conductive material than the first conductive line. |
| 地址 |
Hsin-Chu TW |
