METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH A UNIQUE GATE CONFIGURATION, AND THE RESULTING FINFET DEVICE

摘要

One method disclosed includes, among other things, forming an overall fin structure having a stepped cross-sectional profile, the fin structure having an upper part and a lower part positioned under the upper part, wherein the upper part has a first width and the lower part has a second width that is less than the first width, forming a layer of insulating material in trenches adjacent the overall fin structure such that the upper part of the overall fin structure and a portion of the lower part of the overall fin structure are exposed above an upper surface of the layer of insulating material, and forming a gate structure around the exposed upper part of the overall fin structure and the exposed portion of the lower part of the overall fin structure.

主权项

1. A method of forming a FinFET device with a gate structure, comprising:
forming a plurality of trenches in a semiconductor substrate so as to define an overall fin structure having a stepped cross-sectional profile when viewed in a cross-section that is taken through said gate structure in a gate width direction of said device, said overall fin structure comprising an upper part and a lower part positioned under said upper part, wherein said upper part has a first width and said lower part has a second width that is less than said first width; forming a layer of insulating material in said plurality of trenches such that said upper part of said overall fin structure and a portion of said lower part of said overall fin structure are exposed above an upper surface of said layer of insulating material; and forming a gate structure around said exposed upper part of said overall fin structure and said exposed portion of said lower part of said overall fin structure.