| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF |
| 摘要 |
A semiconductor memory device includes an oscillating signal generation section suitable for generating an oscillation signal oscillating with a period, which is defined by a predetermined temperature-period function, a period control section suitable for controlling the period of the oscillation signal according to a combination of two or more predetermined temperature-period functions, which are different from one another, in response to a refresh characteristic information, and a memory cell array suitable for performing a refresh operation in response to the oscillation signal. |
| 申请公布号 |
US2015371700(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414552075 |
申请日期 |
2014.11.24 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Hyeng-Ouk;KIM Seung-Chan |
| 分类号 |
G11C11/406;G11C11/403 |
主分类号 |
G11C11/406 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
an oscillating signal generation section suitable for generating an oscillation signal oscillating with a period, which is defined by a predetermined temperature-period function; a period control section suitable for controlling the period of the oscillation signal according to a combination of two or more predetermined temperature-period functions, which are different from one another, in response to a refresh characteristic information; and a memory cell array suitable for performing a refresh operation in response to the oscillation signal. |
| 地址 |
Gyeonggi-do KR |
