| 摘要 |
PROBLEM TO BE SOLVED: To provide a new technique concerning formation of a p-type GaN layer by an ion implantation.SOLUTION: The semiconductor laminate structure includes: an n-type GaN layer; and a p-type GaN layer provided on the n-type GaN layer, to which Mg is ion-implanted. By applying a voltage to a pn junction formed by the n-type GaN layer and the p-type GaN layer, electroluminescent light-emission having a peak at a photon energy equal to or higher than 3.0 eV is exhibited. |
