发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To detect where a crack is generated in a semiconductor device having through electrodes.SOLUTION: A semiconductor device comprises: a first wire 41; a plurality of through electrodes TSV arranged along the first wire 41 and penetrating a semiconductor substrate; a second wire 42 to which a ground potential VSS is supplied; a plurality of resistor circuits 50-53 connected in parallel to each other between the first wire 41 and the second wire 42; a comparison circuit 45 having one input terminal connected to one end of the first wire 41; and a voltage generation circuit 46 connected to the other input terminal of the comparison circuit 45 and supplying a reference voltage VREF to the comparison circuit 45. The present invention makes it possible to easily identify where a crack is generated around the through electrodes. |
申请公布号 |
JP2015232500(A) |
申请公布日期 |
2015.12.24 |
申请号 |
JP20140119556 |
申请日期 |
2014.06.10 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
ISHIMATSU MANABU;IDE AKIRA |
分类号 |
G01R31/28;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L27/04 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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