| 摘要 |
PURPOSE:To obtain a high purity III-V group compound semiconductor at low price by a method wherein III-V group compound semiconductor crystal is grown on the surface of the silicon substrate on which a silicon nitride film is formed in advance by performing an organic metal vapor-phase growth method. CONSTITUTION:After an SiNx film 2 is formed on the back side of an Si sub strate 1, they are placed on a sample stand 13 and heated up to 600-800 deg.C by performing a high frequency induction heating and the like. On the other hand, GaAs semiconductor crystal is grown on the surface of the Si substrate 1 by supplying the raw gas containing Ga(CH3)3 and AsH3 into a quartz reaction tube 12. The GaAs semiconductor crystal obtained as above has a high purity which is equal to the purity of the GaAs semiconductor crystal on the GaAs substrate. |
