Oxidizing the Source and Doping the Drain of a Thin-Film Transistor

摘要

A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A patterned semiconductor layer is formed on the gate insulating layer. A source is formed on the patterned semiconductor layer. The peripheral portion of the source is oxidized to form an oxide layer, wherein the oxide layer covers the source and a portion of the patterned semiconductor layer. A protective layer and hydrogen ions are formed, wherein the protective layer covers the oxide layer and the patterned semiconductor layer. The patterned semiconductor layer not covered by the oxide layer is doped with the hydrogen ions to form a drain, A TFT is also provided.

主权项

1. A method for manufacturing a thin-film transistor, comprising the steps of:
forming a gate on a substrate; forming a gate insulating layer on the gate; forming a patterned semiconductor layer on the gate insulating layer; forming a source on the patterned semiconductor layer; oxidizing the peripheral portion of the source to form an oxide layer, wherein the oxide layer covers the source and a portion of the patterned semiconductor layer; forming a protective layer and a plurality of hydrogen ions, wherein the protective layer covers the oxide layer and the patterned semiconductor layer; and doping the patterned semiconductor layer not covered by the oxide layer with the hydrogen ions to form a drain.