SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

摘要

A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

主权项

1. A semiconductor device comprising:
a first gate electrode over a substrate; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film, the oxide semiconductor film comprising a first region and a second region; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second gate insulating film, the second gate electrode being electrically connected to the first gate electrode, wherein the first region overlaps with one of the source electrode and the drain electrode and comprises a first edge, wherein the second region overlaps with the other of the source electrode and the drain electrode and comprises a second edge opposed to the first edge, and wherein a length of the first edge is shorter than a length of the second edge when seen from above.