SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is provided. A fin type active pattern, extending in a first direction, protrudes from a substrate. A gate electrode is disposed on the fin type active pattern. The gate electrode extends in a second direction crossing the first direction. A recess region is disposed in the fin type active pattern disposed at one side of the gate electrode. The recess region includes an upper region having a first width in the first direction and a lower region having a second width smaller than the first width. A first epitaxial layer is disposed on the upper and lower regions of the recess region. A second epitaxial layer is disposed on the first epitaxial layer to fill the recess region.

主权项

1. A semiconductor device comprising:
a fin type active pattern protruding from a substrate and extending in a first direction; a gate electrode disposed on the fin type active pattern, wherein the gate electrode extends in a second direction crossing the first direction; a recess region disposed in the fin type active pattern disposed at one side of the gate electrode, wherein the recess region includes an upper region having a first width in the first direction and a lower region having a second width smaller than the first width; a first epitaxial layer formed along a sidewall and a bottom surface of the recess region disposed in the upper and lower regions of the recess region; and a second epitaxial layer disposed on the first epitaxial layer to fill the recess region, wherein a third width of the first epitaxial layer disposed in the upper region of the recess region is greater than a fourth width of the first epitaxial layer disposed in the sidewall of the lower region of the recess region, wherein the third width and the fourth width are measured in the first direction.