SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor having stable electrical characteristics; and provide a semiconductor device using the oxide semiconductor.SOLUTION: A semiconductor film manufacturing method by sputtering comprises the steps of: holding a substrate in a processing chamber kept in a reduced-pressure state; heating the substrate at a temperature of less than 400°C; introducing a sputter gas from which hydrogen and moisture are removed while removing residual moisture in the processing chamber; and forming an oxide semiconductor film on the substrate by using a metal oxide mounted in the processing chamber as a target. By removing residual moisture in a reaction atmosphere when the oxide semiconductor film is deposited, concentrations of hydrogen and hydride in the oxide semiconductor film can be decreased. Accordingly, stabilization of the oxide semiconductor film can be achieved.