SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of SGT and a structure of the resultant SGT.SOLUTION: A semiconductor device manufacturing method of the present embodiment includes first through sixth processes. The first process is a process of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulation film around the fin-shaped semiconductor layer. The second process is a process of forming a columnar semiconductor layer, a first dummy gate by first polysilicon and a first hard mask by a third insulation film. The third process is a process of forming a second hard mask on a sidewall of the first hard mask and forming a second dummy gate on the first dummy gate and a sidewall of the columnar semiconductor layer. The fourth process is a process of forming a sidewall composed of a fifth insulation film around the second dummy gate and forming a second diffusion layer on an upper part of the fin-shaped semiconductor layer and a lower part of the columnar semiconductor layer.