| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor substrate capable of evaluating plasma damage under a condition that is approximated to a real device process, in a general-purpose structure.SOLUTION: The evaluation method of the semiconductor substrate for evaluating damage caused by processing the semiconductor substrate while using a plasma includes: processing the semiconductor substrate while using the plasma, then forming a well by ion implantation under a condition where the dosage is greater than 1×10atoms/cm; then forming a pn junction by diffusing a dopant of which the conductivity type is inverse to that of the well; and measuring a junction leak current by applying a reverse direction bias to the formed pn junction part, thereby evaluating the damage caused by the plasma in processing the semiconductor substrate. |
