发明名称 圧電体素子及びその製造方法
摘要 <p>A piezoelectric device (10, 50, 90, 100, 150, 160) includes: a substrate (12, 30, 110, 170); a first electrode (14, 32, 114) which is layered over the substrate (12, 30, 110, 170); a first piezoelectric film (16, 34, 116) which is layered over the first electrode (14, 32, 114); a metal oxide film (18, 36, 62A, 62B, 118) which is layered over the first piezoelectric film (16, 34, 116); a metal film (20, 38, 64A, 64B, 120) which is layered over the metal oxide film (18, 36, 62A, 62B, 118); a second piezoelectric film (22, 44, 74, 122) which is layered over the metal film (20, 38, 64A, 64B, 120); and a second electrode (24, 46, 82, 124) which is layered over the second piezoelectric film (22, 44, 74, 122).</p>
申请公布号 JP5836754(B2) 申请公布日期 2015.12.24
申请号 JP20110239245 申请日期 2011.10.31
申请人 富士フイルム株式会社 发明人 藤井 隆満;菱沼 慶一
分类号 H01L41/083;B41J2/045;B41J2/055;B41J2/16;H01L41/047;H01L41/09;H01L41/316 主分类号 H01L41/083
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