METHOD OF FORMING A MEMORY AND METHOD OF FORMING A MEMORY ARRAY

摘要

A method of forming a memory includes forming a first electrode and a second electrode within a first layer over a semiconductor substrate, forming a resistive-switching memory element and an antifuse element over the first layer, wherein the resistive-switching memory element includes a metal oxide layer and is electrically contacting the first electrode, wherein the metal oxide layer has a first thickness and a forming voltage that corresponds to the first thickness, wherein the antifuse element includes a dielectric layer and is electrically contacting the second electrode, and wherein the dielectric layer has a second thickness that is less than the first thickness and a dielectric breakdown voltage that is less than the forming voltage, and forming a third electrode and a fourth electrode within a second layer over the resistive-switching memory element and the antifuse element, wherein the third electrode is electrically contacting the resistive-switching memory element and the fourth electrode is electrically contacting the antifuse element.

主权项

1. A method of forming a memory, comprising:
forming a first electrode and a second electrode within a first layer over a semiconductor substrate; forming a resistive-switching memory element and an antifuse element over the first layer, wherein the resistive-switching memory element comprises a metal oxide layer and is electrically contacting the first electrode, wherein the metal oxide layer has a first thickness and a forming voltage that corresponds to the first thickness, wherein the antifuse element comprises a dielectric layer and is electrically contacting the second electrode, and wherein the dielectric layer has a second thickness that is less than the first thickness and a dielectric breakdown voltage that is less than the forming voltage; and forming a third electrode and a fourth electrode within a second layer over the resistive-switching memory element and the antifuse element, wherein the third electrode is electrically contacting the resistive-switching memory element and the fourth electrode is electrically contacting the antifuse element.