| 发明名称 |
Integrated Circuit Structure and Method with Solid Phase Diffusion |
| 摘要 |
The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate; a channel region of a first type conductivity, defined in the fin active region and having a first carrier concentration; and an anti-punch through (APT) feature of the first type conductivity, wherein the APT feature is formed in the semiconductor substrate, is directly underlying the channel region, and has a second carrier concentration greater than the first carrier concentration. |
| 申请公布号 |
US2015372144(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414312166 |
申请日期 |
2014.06.23 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Fang Ziwei;Wang Tsan-Chun |
| 分类号 |
H01L29/78;H01L29/66;H01L21/265;H01L21/311;H01L21/225;H01L21/02;H01L21/324;H01L27/092;H01L29/10;H01L29/165;H01L29/36;H01L21/31 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a fin active region formed on a semiconductor substrate; a channel region of a first type conductivity, defined in the fin active region and having a first carrier concentration; and an anti-punch through (APT) feature of the first type conductivity, wherein the APT feature is formed in the semiconductor substrate, is underlying the channel region, and has a second carrier concentration greater than the first carrier concentration. |
| 地址 |
Hsin-Chu TW |
