SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first nitride semiconductor layer including carbon and having a first side and an opposing second side. The semiconductor device further includes an intrinsic nitride semiconductor layer on the first nitride semiconductor layer. A first side of the intrinsic semiconductor layer faces the second side of the first nitride semiconductor layer. The semiconductor device further includes a second nitride semiconductor layer including aluminum and disposed on a second side of the intrinsic nitride semiconductor layer opposite to the first nitride semiconductor layer. The first nitride semiconductor layer has a carbon distribution in which a concentration of carbon changes between a high concentration region and a low concentration region. In some embodiments, the high concentration region has a carbon concentration at least 100 times higher than the carbon concentration in the low concentration region.

主权项

1. A semiconductor device, comprising:
a first nitride semiconductor layer containing carbon, the first nitride semiconductor layer having a first side opposite a second side; an intrinsic nitride semiconductor layer on the first side of the first nitride semiconductor layer; and a second nitride semiconductor layer on the intrinsic nitride semiconductor layer opposite to the first nitride semiconductor layer and including aluminum, wherein the first nitride semiconductor layer has a carbon distribution along a thickness direction from the second side to the first side in which a concentration of carbon changes from a high concentration region to a low concentration region.