SEMICONDUCTOR DEVICE

摘要

To provide a CoC type semiconductor device capable of preventing a power supply voltage from dropping (IR drop) in a center portion of a chip, and preventing deterioration in timing reliability. The semiconductor device includes a substrate, a first semiconductor chip placed on the substrate, having a circuit formation surface on an upper surface provided opposite to a surface facing the substrate, and including a TSV electrode and a connection pad electrically connected to the substrate, a second semiconductor chip placed on the upper surface of the first semiconductor chip, and electrically connected to the first semiconductor chip through a bump, a connection member for electrically connecting the connection pad of the first semiconductor chip to the substrate, and a redistribution layer formed on the upper surface of the first semiconductor chip, and electrically connected to the TSV electrode.

主权项

1. A semiconductor device comprising:
a substrate; a first semiconductor chip placed on the substrate, having a circuit formation surface on an upper surface provided opposite to a surface facing the substrate, and including a through silicon via (TSV) electrode and a connection pad both electrically connected to the substrate; a second semiconductor chip placed on the upper surface of the first semiconductor chip, and electrically connected to the first semiconductor chip through a bump; a connection member for electrically connecting the connection pad of the first semiconductor chip to the substrate; and a redistribution layer formed on the upper surface of the first semiconductor chip, and electrically connected to the TSV electrode, wherein the connection pad formed on the upper surface of the first semiconductor chip is a wire bonding pad, and the connection member is a wire.