| 发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, SEMICONDUCTOR DEVICE DESIGN APPARATUS, AND PROGRAM |
| 摘要 |
A semiconductor device includes a multilayer interconnect layer formed over a substrate, an outer peripheral cell column disposed along an edge of the substrate in a plan view, the outer peripheral cell column including a first I/O cell, first and second inner peripheral cell columns formed at an inner peripheral side of the outer peripheral cell column, the first and second inner peripheral cell columns including a second I/O cell, and signal interconnects for forming an internal circuit of the semiconductor device, arranged between the first inner peripheral cell column and the second inner peripheral cell column. |
| 申请公布号 |
US2015371950(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201514732491 |
申请日期 |
2015.06.05 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
TOMODA Masafumi;TSUKUDA Masayuki |
| 分类号 |
H01L23/528;H01L23/58;H01L23/50 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a multilayer interconnect layer formed over a substrate; an outer peripheral cell column disposed along an edge of the substrate in a plan view, the outer peripheral cell column including a first I/O cell; first and second inner peripheral cell columns formed at an inner peripheral side of the outer peripheral cell column, the first and second inner peripheral cell columns including a second I/O cell; and signal interconnects for forming an internal circuit of the semiconductor device, arranged between the first inner peripheral cell column and the second inner peripheral cell column. |
| 地址 |
Kawasaki-shi JP |
