SEMICONDUCTOR DEVICE

摘要

Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer includes metal ions.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a low-K dielectric layer on the semiconductor substrate; a conductive feature in the low-k dielectric layer, wherein the conductive feature comprises a diffusion barrier layer and a conductive layer; and a cap layer on the conductive feature, wherein the cap layer comprises oxide of the conductive layer.