发明名称 |
DOUBLE SELF ALIGNED VIA PATTERNING |
摘要 |
A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer. |
申请公布号 |
US2015371896(A1) |
申请公布日期 |
2015.12.24 |
申请号 |
US201514837827 |
申请日期 |
2015.08.27 |
申请人 |
International Business Machines Corporation ;GLOBALFOUNDRIES Inc. |
发明人 |
Chen Hsueh-Chung;Xu Yongan;Yin Yunpeng;Zhao Ailian |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; and forming a self-aligned via opening in the substrate below the trench pattern, the self-aligned via opening being self-aligned on all sides by a self-aligned via pattern in the second hardmask layer. |
地址 |
Armonk NY US |