发明名称 |
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME |
摘要 |
A method for fabricating a semiconductor device includes forming an insulation layer over a substrate; forming an open portion in the insulation layer; forming a sacrificial spacer over sidewalls of the open portion; forming, over the sacrificial spacer, a first conductive pattern in a lower section of the open portion; forming an ohmic contact layer over the first conductive pattern; forming an air gap by removing the sacrificial spacer; capping the air gap by forming a barrier layer over the ohmic contact layer; and forming a second conductive pattern over the barrier layer to fill an upper section of the open portion. |
申请公布号 |
US2015371891(A1) |
申请公布日期 |
2015.12.24 |
申请号 |
US201514841259 |
申请日期 |
2015.08.31 |
申请人 |
SK hynix Inc. |
发明人 |
LEE Hyo-Seok;YEOM Seung-Jin;LIM Sung-Won;HONG Seung-Hee;LEE Nam-Yeal |
分类号 |
H01L21/768;H01L49/02;H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Gyeonggi-do KR |