METHOD FOR CONTROLLING SEMICONDUCTOR DEPOSITION OPERATION

摘要

The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.

主权项

1. A method for controlling a semiconductor deposition operation, comprising:
identifying a first target lifetime in a physical vapor deposition (PVD) system; inputting the first target lifetime into a processor; outputting, by the processor, a nitrogen flow rate according to a compensation curve; and tuning the nitrogen flow rate in the PVD system.