| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of preventing a stationary leakage current from being generated when a memory cell is inactive (deselected). <P>SOLUTION: A semiconductor storage device comprises: bit lines (BIT/BITB); a memory element (memory cell or local sense amplifier) connected to the bit lines; and a precharge circuit for applying a predetermined voltage (VDD) to the bit lines for a predetermined period (PRE=L) immediately before the memory element is set to an active state by activation of a word line (WL=H). <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
