| 摘要 |
<p>A static random access memory (SRAM) device is provided. A memory cell is supplied with a first driving voltage. A bit line pair is connected to the memory cell. A sense amplifier is connected to the bit line pair. The sense amplifier is supplied with a second driving voltage that is lower than the first driving voltage. A control logic selects a pre-charge voltage from the first and second driving voltages, pre-charges the bit line pair to the pre-charge voltage and adjusts the pre-charged voltage to a target voltage.</p> |
