| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a logic circuit capable of simplifying a manufacturing process while achieving a stable and high-speed operation. <P>SOLUTION: A logic circuit 1 comprises first and second FETs 2A, 2B connected in series between a bias supply and a ground and each having a gate terminal to which an input voltage is applied. The FET 2A between the first and second FETs 2A, 2B includes: a gate electrode film 17 to which the gate terminal is connected; a channel layer 12 composed of a semiconductor material; and a charge storage layer 16 arranged between the gate electrode film 17 and the channel layer 12 and including a charge storage structure storing and discharging an electric charge. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
