| 发明名称 |
ULTRA-SENSITIVE RADIATION DOSIMETERS |
| 摘要 |
A method of forming a transistor comprises forming a conducting substrate layer, forming a dielectric layer over the conducting substrate layer, forming a channel over at least a portion of the dielectric layer and forming first and second source/drain regions contacting respective first and second portions of the channel. The channel comprises a thin-film carbon material. The conducting substrate layer, the dielectric layer, the channel and the first and second source/drain regions are formed such that exposure to radiation causes a change in a threshold voltage of the transistor. |
| 申请公布号 |
US2015369925(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201213611162 |
申请日期 |
2012.09.12 |
| 申请人 |
Lin Yu-Ming;Yau Jeng-Bang |
发明人 |
Lin Yu-Ming;Yau Jeng-Bang |
| 分类号 |
G01T1/02;H01L51/42;H01L29/16;H01L51/00;H01L31/119;H01L31/18 |
主分类号 |
G01T1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a transistor, comprising:
forming a conducting substrate layer; forming a dielectric layer over the conducting substrate layer; forming a channel over at least a portion of the dielectric layer; and forming first and second source/drain regions contacting respective first and second portions of the channel; wherein the channel comprises a thin-film carbon material; and wherein the conducting substrate layer, the dielectric layer, the channel and the first and second source/drain regions are formed such that exposure to radiation causes a change in a threshold voltage of the transistor. |
| 地址 |
West Harrison NY US |
