发明名称 SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a technique capable of improving manufacturing quality of a semiconductor device and improving manufacturing throughput.SOLUTION: The substrate processing apparatus includes: a processing container for accommodating a substrate; a first heating part for heating the substrate accommodated in the processing container; a gas generation part for generating a processing gas; a gas introduction pipe for introducing the processing gas into the processing container from the gas generating part; and a second heating part, disposed outside the processing container, for heating a connection part of the gas introduction part and the processing container.
申请公布号 JP2015233157(A) 申请公布日期 2015.12.24
申请号 JP20150154389 申请日期 2015.08.04
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TATENO HIDETO;WADA YUICHI;ASHIHARA YOJI;YAMAZAKI YOSHINOBU;USHIDA TAKURO;NAKAMURA IWAO;IZUMI MANABU
分类号 H01L21/31;H01L21/316;H01L21/324 主分类号 H01L21/31
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