发明名称 |
SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of improving manufacturing quality of a semiconductor device and improving manufacturing throughput.SOLUTION: The substrate processing apparatus includes: a processing container for accommodating a substrate; a first heating part for heating the substrate accommodated in the processing container; a gas generation part for generating a processing gas; a gas introduction pipe for introducing the processing gas into the processing container from the gas generating part; and a second heating part, disposed outside the processing container, for heating a connection part of the gas introduction part and the processing container. |
申请公布号 |
JP2015233157(A) |
申请公布日期 |
2015.12.24 |
申请号 |
JP20150154389 |
申请日期 |
2015.08.04 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TATENO HIDETO;WADA YUICHI;ASHIHARA YOJI;YAMAZAKI YOSHINOBU;USHIDA TAKURO;NAKAMURA IWAO;IZUMI MANABU |
分类号 |
H01L21/31;H01L21/316;H01L21/324 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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