| 摘要 |
<p>A method of manufacturing a semiconductor device includes: forming a conductive film on a semiconductor substrate; patterning the conductive film in a memory region to form a first gate electrode; after forming the first gate electrode, forming a mask film above each of the conductive film in a logic region and the first gate electrode; removing the mask film in the logic region; forming a first resist film above the mask film left in the memory region and above the conductive film left in the logic region; and forming a second gate electrode in the logic region by etching the conductive film using the first resist film as a mask.</p> |
