SEMICONDUCTOR DEVICE

摘要

The parasitic capacitance formed by a gate electrode, a contact, and a side wall is reduced.;The gate electrode and the side wall are covered by an insulating layer. The contact passes through the insulating layer and is connected to a diffusion layer. Then, an air gap is located between the side wall and the contact. The air gap faces the contact at the side face on the contact side via the insulating layer.

主权项

1. A semiconductor device, comprising:
a substrate; a gate electrode formed over the substrate; side walls formed over side faces of the gate electrode; impurity regions which are formed in the substrate and become a source and a drain; an insulating layer covering the gate electrode, the side walls, and the impurity regions; a contact which passes through the insulating layer and is connected to one of the impurity regions; and an air gap which is located between one of the side walls and the contact, and which faces the contact at the side face on the contact side via the insulating layer.