SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

摘要

A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

主权项

1. A solid-state imaging device comprising:
a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to said photoelectric converters on said sensor substrate; an insulation layer, provided on said light receiving face, and having a stepped construction wherein the film thickness of said pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to said periphery region on said light receiving face side; and on-chip lenses provided to positions corresponding to said photoelectric converters on said insulation layer.