| 发明名称 |
INSULATOR VOID ASPECT RATIO TUNING BY SELECTIVE DEPOSITION |
| 摘要 |
Disclosed herein is a structure conductive lines disposed in a base layer and separated by a first region. Pillars are each disposed over a respective one of the conductive lines. A dielectric fill layer is disposed over the pillars and extending between the pillars into the first region, and a void is disposed in the dielectric fill layer in the first region between the conductive lines. |
| 申请公布号 |
US2015371940(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414310870 |
申请日期 |
2014.06.20 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Hsiang-Wei;Liao Yu-Chieh;Lin Tien-Lu |
| 分类号 |
H01L23/528;H01L21/764;H01L21/768 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure, comprising:
conductive lines disposed in a base layer and separated by a first region; pillars, each pillar disposed over a respective one of the conductive lines; a dielectric fill layer disposed over the pillars and extending between the pillars into the first region; and a void in the dielectric fill layer in the first region between the conductive lines. |
| 地址 |
Hsin-Chu TW |
