METHOD AND APPARATUS FOR CREATING A PORUS REFLECTIVE CONTACT

摘要

A light emitting device includes a semiconductor structure having a light emitting region (102) disposed between an N-type region (103) and a P-type region (101). A porous region (103A) is disposed between the light emitting region (102) and a contact (N-contact 131) electrically connected to one of the N-type region (103) and the P-type regions (101). The porous region (102) scatters light away from the contact (131), which may improve light extraction from the device. In some embodiments the porous region (103A) is an N-type semiconductor material such as GaN or GaP. The porous region (103A) may be connected to a reflective contact comprised of ITO and/or silver regions. The reflective contact in conjunction with the porous region may reflect a diffuse light toward the primary light emitting surface(s).

主权项

1. A semiconductor structure, comprising:
a plurality of semiconductor regions, comprising a first semiconductor region and a second semiconductor region, wherein one of the semiconductor regions is an N-type region and the other of the semiconductor regions is a P-type region; a light emitting region disposed between the semiconductor regions; a first surface from which a substantial fraction of the light extracted from the semiconductor structure is emitted; a second surface opposite to the first surface; a first contact electrically connected to one of the semiconductor regions, the first contact comprising:
a first ITO region; anda metallic region; a first porous region disposed between the first contact and the light emitting region; and a second contact electrically connected to one of the semiconductor regions; wherein the first contact and the second contact are connected to different semiconductor regions.