| 发明名称 |
SEMICONDUCTOR CHIP CARRIERS WITH MONOLITHICALLY INTEGRATED QUANTUM DOT DEVICES AND METHOD OF MANUFACTURE THEREOF |
| 摘要 |
A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains. |
| 申请公布号 |
US2015372091(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201514839364 |
申请日期 |
2015.08.28 |
| 申请人 |
de Rochemont L. Pierre |
发明人 |
de Rochemont L. Pierre |
| 分类号 |
H01L29/12;H01L29/04;H01L29/16;H01L33/18;H01L33/34;H01L21/02;H01L33/06 |
主分类号 |
H01L29/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A three-dimensional polycrystalline semiconductor material, comprising:
a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm; and a minor ingredient forming boundaries between the individual crystalline grains. |
| 地址 |
Austin TX US |
