NON-VOLATILE RANDOM ACCESS MEMORY DEVICES WITH SHARED TRANSISTOR CONFIGURATION AND METHODS OF FORMING THE SAME

摘要

Embodiments of non-volatile random access memory (RAM) devices and methods of forming the same are provided herein. In an embodiment, a non-volatile RAM device includes a first access transistor that is in electrical communication with a wordline. A first memory element and a first two-terminal selector are serially connected to each other and are in electrical communication with a first bitline and the first access transistor. A second memory element and a second two-terminal selector are serially connected to each other and are in electrical communication with a second bitline and the first access transistor.

主权项

1. A non-volatile random access memory device comprising:
a first access transistor in electrical communication with a wordline; a first memory element and a first two-terminal selector serially connected and in electrical communication with a first bitline and the first access transistor; and a second memory element and a second two-terminal selector serially connected and in electrical communication with a second bitline and the first access transistor.