发明名称 Image Mask Film Scheme and Method
摘要 A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
申请公布号 US2015370158(A1) 申请公布日期 2015.12.24
申请号 US201514841141 申请日期 2015.08.31
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tu Chih-Chiang;Chen Chun-Lang;Chang Jong-Yuh;Hsu Boming;Shen Tran-Hui
分类号 G03F1/48;G03F1/46 主分类号 G03F1/48
代理机构 代理人
主权项 1. A photolithographic mask comprising: a substrate; and an absorbance layer over the substrate, wherein the absorbance layer has an intensity profile less than about 0.66.
地址 Hsin-Chu TW