发明名称 |
Image Mask Film Scheme and Method |
摘要 |
A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process. |
申请公布号 |
US2015370158(A1) |
申请公布日期 |
2015.12.24 |
申请号 |
US201514841141 |
申请日期 |
2015.08.31 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tu Chih-Chiang;Chen Chun-Lang;Chang Jong-Yuh;Hsu Boming;Shen Tran-Hui |
分类号 |
G03F1/48;G03F1/46 |
主分类号 |
G03F1/48 |
代理机构 |
|
代理人 |
|
主权项 |
1. A photolithographic mask comprising:
a substrate; and an absorbance layer over the substrate, wherein the absorbance layer has an intensity profile less than about 0.66. |
地址 |
Hsin-Chu TW |