| 摘要 |
The present invention relates to a thin film transistor array substrate and a manufacturing method thereof, capable of improving opening and penetration ratios and securing device reliability by changing the formation of an active layer of a pixel array. The thin film transistor array substrate includes: multiple gate lines and data lines defining multiple transmission areas, intersecting with each other, on the pixel array on the substrate; first and second gate electrodes placed in first and second areas of the gate lines; a light blocking layer overlapping the first gate electrode in a non-transmission area of the pixel array; an active layer including a first channel area overlapping the first gate electrode, a first low concentration area on both sides of the first gate electrode by being adjacent to the first channel area, a second channel area in an area overlapping the second gate electrode, and a second low concentration area, which is adjacent to the second channel area, and having lower concentration than the first low concentration area on both sides of the second gate electrode; a source electrode connected to a high concentration area of an end of the active layer, and integrated with the data lines; and a drain electrode connected to a high concentration area of the other end of the active layer. |
