| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide semiconductor evaluation device and method which are arranged so that the mobility of an oxide semiconductor can be evaluated with more accuracy by factoring in a thickness of an oxide semiconductor.SOLUTION: An oxide semiconductor evaluation device comprises: a light source part 1 serving as a light irradiation part for irradiating an oxide semiconductor SP targeted for evaluation with light of a predetermined wavelength; a measurement-wave irradiation part 2 for irradiating the oxide semiconductor SP with predetermined measurement waves; a reflection-wave measurement part 3 for measuring reflection waves produced by the measurement waves reflected off the oxide semiconductor SP; a thickness measurement part 4 for measuring the thickness of the oxide semiconductor SP in a direction along a travelling direction of light emitted by the light irradiation part; and a control-processing part 5 as a processing part for correcting the intensities of reflection waves measured by the reflection-wave measurement part 3 based on the thickness of the oxide semiconductor SP measured by the thickness measurement part 4. |
